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TANTALUM ETHOXIDE

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TANTALUM ETHOXIDE Basic information
TANTALUM ETHOXIDE Chemical Properties
  • Melting point:21 °C(lit.)
  • Boiling point:155 °C0.01 mm Hg(lit.)
  • Density 1.566 g/mL at 25 °C(lit.)
  • refractive index n20/D 1.487(lit.)
  • Flash point:87 °F
  • storage temp. 2-8°C
  • solubility Soluble in organic solvents.
  • form liquid
  • Specific Gravity1.56
  • Water Solubility Decomposes in water. Soluble in organic solvents.
  • Hydrolytic Sensitivity8: reacts rapidly with moisture, water, protic solvents
  • Sensitive Moisture Sensitive/Air Sensitive
  • BRN 3678999
  • CAS DataBase Reference6074-84-6(CAS DataBase Reference)
  • EPA Substance Registry SystemEthanol, tantalum(5+) salt (6074-84-6)
Safety Information
  • Hazard Codes C,F
  • Risk Statements 10-34
  • Safety Statements 16-26-36/37/39-45
  • RIDADR UN 2920 8/PG 2
  • WGK Germany 3
  • 3-8-10-21
  • TSCA No
  • HazardClass 3
  • PackingGroup III
MSDS
TANTALUM ETHOXIDE Usage And Synthesis
  • DescriptionTantalum ethoxide can be used for the manufacture of tantalum (V) oxidethin-film materials using chemical vapor deposition, atomic layer deposition, and sol-gel processing. Those materials have applications in semiconductor, electrochromic and optical fields1,2,3. In research filed, it can be used for the synthesis of some novel compounds such as oxo-alkoxide-carboxylates like Ta4O4(OEt)8(OOCCH3)4 with special molecular structure2. It is also used to prepare tantalum oxide nanoparticles for the imaging cartilage4.
  • Reference
    1. Sukanya Murali, †, A. Anand Deshpande, and C. G. Takoudis. "Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen." Industrial & Engineering Chemistry Research 44.16(2005): págs. 6387-6392.
    2. Dong, L. U., et al. "Synthesis Method and Application of Tantalum (Ⅴ) Ethoxide" Guangzhou Chemical Industry (2016).
    3. https://www.alfa.com/en/catalog/014643/
  • Chemical Propertiesclear colorless to almost colorless liquid or
  • UsesTantalum(V) ethoxide precursor is used to deposit ultra thin films of Tantalum oxide and other tantalum containing films by atomic layer deposition and chemical vapor deposition methods
  • Purification MethodsPurify it by distillation under reduced pressure. It aggregates in *C6H6,EtOH, MeCN, pyridine and diisopropyl ether. [Bradley et al. J Chem Soc 726 1955, Bradley et al. J Chem Soc 5 1956, Beilstein 1 IV 1312.]
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  • Company Name:Beijing Holiyang Chemical Co. Ltd. Gold
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