TETRAKIS(DIETHYLAMINO)ZIRCONIUM

Description

Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers^1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method³.

Reference

1. Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992.
2. Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001.
3. Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.

Uses

Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions.

General Description

Atomic number of base material: 40 Zirconium