BUFFER SOLUTION

Использование

Used for pretreatment of planar silicon devices when plating with Nickel plating solution products 44069 and 44070.

Общее описание

Improved HF Buffer System with stabilized HF activity - selective solvent for SiO2 used in semiconductor technology of planar passivated devices - transistors, integrated circuits, diodes, rectifiers, SCR, MOS, FET

Advantages:

• Ready-to-use - Economical
• HF activity buffer stabilized
• Excellent process reproducibility
• Does not undercut masked oxide
• Will not stain diffused silicon surfaces
• Avoids contamination on silicon surfaces
• Photoresist coating unaffected

Buffer HF improved is an idealized buffer preparation characterized by a high buffer index and an optimized, uniform oxide-etch rate. The composition of buffer HF improved is precisely controlled by HF activity measurements and electrometric pH. The mass balance corresponds essentially to (HF) + (F) + 2(HF₂) for a two-ligand mononuclear complex and the charge balance is (H⁺) - (F) + (HF^2- ). The HF activity is maintained constant through the specific equilibrium constant which regulates the equilibrium reaction between fluoride, bifluoride, and HF buffer components. A second equilibrium constant participates in the regulation of the hydronium in concentration of pH.

Buffer HF improved is produced and analyzed to be essentially free of impurities. Nitrate ions, a common impurity causing stains on diffused silicon surfaces, are specifically removed. Heavy metal impurities, which can lead to degradation of device characteristics, are rigidly controlled under manufacturing process specifications.