4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices.

Hole-transporting layer and Hole Injection layer material for High-Performance OLEDs.