In semiconductor technology
In semiconductor research.
To grow single crystals, Al and Sb are mixed stoichiometrically in the Al2O3 boat and melted, followed by pulling up of a single crystal using the Czochralski method. Melted Al is oxidized easily and various methods, like rotation of a crucible, are considered to remove the oxide.1 The speed of pulling up is better to be smaller than 7.5 cm/h. High-grade graphite crucible is often used, but p-type impurities might be produced by the reaction of Al and C. Zone refining using the Al2O3 boat or floating zone refining is possible, but a remarkable removal of impurities like Si and Ge is not expected.
Aluminium antimonide (AlSb) decomposes slowly to Al and Sb at room temperature.
Structure and conformation
The space lattice of AlSb belongs to the cubic system, and its zinc blend-type structure has a lattice constant of a=0.6136 nm and Al–Sb=0.266 nm.
