HAFNIUM SILICIDE

gray powder(s); rhomb, a=0.3677nm, b=1.455nm, c=0.3649nm; hardness 930 kgf/mm2; as 99.5% pure material, used as sputtering target to produce wear-resistant films and semiconducting films for use in integrated circuits [KIR80] [STR93] [CER91]

They have been used as ohmic contacts, Schottky barrier contacts, gate electrodes, local interconnects, and diffusion barriers. FeSi2 has become the remarkable source as high temperature thermoelectric material. It is also used as a powder in ceramic materials.