A method for the preparation of a two-dimensional gallium telluride material
method, characterized by the following steps: step I. GaTe single crystals were prepared by dosing Ga:Te in a substance amount ratio of 1:1 using the vertical Bridgman crystal growth method. Step II. In a Michelona Universal 2440-750 glove box under Ar atmosphere, a large block of surface light was selected
smooth and wrinkle-free GaTe bulk material and separated it into multiple blocks along the natural solvation surface. Step 3: Inside a Michelona Universal 2440-750 glove box under Ar atmosphere, a GaTe sheet with a thickness of about 6-8 m was torn away from the surface of the GaTe bulk material with a bright surface and less damage using Scotch tape. Step 4: In a Michelona Universal 2440-750 glove box under Ar atmosphere, the Scotch tape with the GaTe sheet was bonded and separated several times until the surface of the tape was no longer shiny and a denser layer of GaTe with a thickness of several hundred nanometers was successfully attached.
