Germanium telluride (GeTe) is an efficient semiconductor of germanium and tellurium and is a phase-change material. It is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, α and γ) and one at high temperature (crystalline, β ). It shows semimetallic conduction and ferroelectric behaviour.
Germanium telluride (GeTe) is a promising material for thermoelectric applications. Nanostructuring; non-stoichiometric defects; doping and alloying with other materials further enhances its thermoelectric performance.
GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories.
Germanium telluride is produced by heating Ge (less resistivity) and Te (99.998%) to their melting points in an evacuated quartz tube. single crystals can be obtained using the zone melting method.
Germanium telluride is a promising thermoelectric compound with uses in doping, alloying, and nanostructuring, non-stoichiometric defects. It is also an important semiconductor that can act as a low temperature superconductor when doped. GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories.
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