GALLIUM ANTIMONIDE Struktur

Galliumantimonid

Bezeichnung:Galliumantimonid

CAS-Nr12064-03-8

Englisch Name:GALLIUM ANTIMONIDE

CBNumberCB5219034

SummenformelGaSb

Molgewicht191.48

MOL-Datei12064-03-8.mol

Synonyma

Galliumantimonid

Galliumantimonid physikalisch-chemischer Eigenschaften

Schmelzpunkt	710 °C 980 °C (lit.)
Dichte	5.619 g/mL at 25 °C 5.62 g/mL at 25 °C (lit.)
Aggregatzustand	pieces
Farbe	brown cubic crystals, crystalline
Widerstand (resistivity)	~0.1 Ω-cm
Wasserlöslichkeit	Insoluble in water.
Halbleitereigenschaften	<100>
Crystal Structure	Cubic, Sphalerite Structure - Space Group F(-4)3m
Expositionsgrenzwerte	ACGIH: TWA 0.5 mg/m3 NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3
CAS Datenbank	12064-03-8(CAS DataBase Reference)
EPA chemische Informationen	Antimony, compd. with gallium (1:1) (12064-03-8)

Sicherheit

Kennzeichnung gefährlicher	Xn,N
R-Sätze:	20/22-51/53
S-Sätze:	61
RIDADR	UN 1549 6.1/PG 3
WGK Germany	2
TSCA	Yes
HazardClass	6.1
PackingGroup	III
HS Code	2853909090

Gefahreninformationscode (GHS)

GALLIUM ANTIMONIDE Chemische Eigenschaften,Einsatz,Produktion Methoden

R-Sätze Betriebsanweisung:
R20/22:Gesundheitsschädlich beim Einatmen und Verschlucken.
R51/53:Giftig für Wasserorganismen, kann in Gewässern längerfristig schädliche Wirkungen haben.
S-Sätze Betriebsanweisung:
S61:Freisetzung in die Umwelt vermeiden. Besondere Anweisungen einholen/Sicherheitsdatenblatt zu Rate ziehen.
Chemische Eigenschaften
cub; 6mm pieces and smaller with 99.99% purity; band gap, eV, 0.81 (0K), 0.72 (300K); mobility (300K), cm2/(V·s), 5000 for electrons, 850 for holes; effective mass 0.042 for electrons, 0.40 for holes; dielectric constant 15.7; enthalpy of fusion 25.10kJ/mol; used in semiconducting devices; obtained by direct reaction of Ga and Sb at high temp [HAW93] [KIR82] [CER91] [CRC10]
Verwenden
Gallium antimonide can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. It can be used as a component of photoresists and other composites where high refractive index is desirable
Verwenden
Gallium antimonide (GaSb), when in pure form, is used in semiconductor industries.
Verwenden
GaSb is utilized as a substrate for a low-pass filter using sharp onset oftransmission at 1.8 mm (300 K). Visible detector. The photovoltaic cell using a p–n junction has its sensibility for 0.4–0.9 mm. The cell has the maximum detectivity D*=4.5×10¹¹ cm Hz^1/2/W (400 Hz) at 0.8 mm and a time constant of ca. 10^-3s.
Vorbereitung Methode
To grow single crystals, high-grade (more than 99.999%) Ga and antimony (Sb) are mixed stoichiometrically in a quartz or graphite boat and melted in an H2 atmosphere, followed by horizontal zone refining of the mixture. To grow large single crystals, the material obtained using the method above is put into a quartz or graphite crucible and melted in an H2 atmosphere after removing the surface oxide by etching. The large crystals are then grown by the Czochralski method. To obtain highgrade GaSb, the atmospheric gas H2 must be purified by flowing through heated palladium (Pd). The GaSb with the carrier density of p-type 2×10¹⁶ cm^-3and mobility of 2740 cm²/Vs has been reported for pure GaSb.This crystal can be also synthesized by the solution method. GaSb precipitates by decreasing the temperature of liquid Ga, containing 10%–20% (atomic ratio) of Sb, slowly from the melting point of GaSb.
Structure and conformation
The space lattice of gallium antimonide (GaSb) belongs to the cubic system, and its zinc blendetype structure has a lattice constant of a=0.6118 nm, Gsa–Sb=0.264 nm.

GALLIUM ANTIMONIDE Upstream-Materialien And Downstream Produkte

Galliumantimonid Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

12064-03-8, GALLIUM ANTIMONIDE Verwandte Suche:

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