INDIUM ARSENIDE Struktur

Indiumarsenid

Bezeichnung:Indiumarsenid

CAS-Nr1303-11-3

Englisch Name:INDIUM ARSENIDE

CBNumberCB7342103

SummenformelAsIn

Molgewicht189.74

MOL-Datei1303-11-3.mol

Synonyma

Indiumarsenid

Indiumarsenid physikalisch-chemischer Eigenschaften

Schmelzpunkt	936°C
Dichte	5.69 g/cm³
Brechungsindex	3.51
Löslichkeit	insoluble in acid solutions
Aggregatzustand	1.5 To 9.5mm Polycrystalline Pieces
Farbe	Gray
Wasserlöslichkeit	Insoluble in water.
Crystal Structure	Cubic, Sphalerite Structure - Space Group F(-4)3m
Merck	14,4949
Expositionsgrenzwerte	ACGIH: TWA 0.01 mg/m3; TWA 0.1 mg/m3 NIOSH: IDLH 5 mg/m3; TWA 0.1 mg/m3; Ceiling 0.002 mg/m3
EPA chemische Informationen	Indium arsenide (InAs) (1303-11-3)

Sicherheit

RIDADR	UN1557
TSCA	Yes
HazardClass	6.1
PackingGroup	III

Gefahreninformationscode (GHS)

INDIUM ARSENIDE Chemische Eigenschaften,Einsatz,Produktion Methoden

Chemische Eigenschaften
Crystals.Insoluble in acids.
Verwenden
Indium arsenide is used in semiconductor electronics, construction of infrared detectors, terahertz radiation source, as it is a strong Photo-dember emitter, superior electron mobility and velocity, in high-power applications detector, diode lasers.
Verwenden
In semiconductor electronics.
Verwenden
Indium arsenide is used in semiconductor devices.
Vorbereitung Methode
In and As are put into a silica boat at the stoichiometric ratio. The materials are put into a silica tube together with a small amount of As. The small amount of As is heated to about 300℃ to eliminate O2 under evacuation followed by sealing off the tube. The boat is zone-refined at the speed of 2 cm/h in the first run and 5 cm/h in the following several runs. The obtained ingot is pulled out and cut by half to use as a single crystal source. Loading the source into the silica boat with roughened inner wall, the boat is put into a horizontal silica tube together with a small amount of As followed by vacuum sealing in the same manner as the first run. A single crystal is obtained by putting the silica tube into the horizontal Stockbarger furnace with three zones: A (560℃), B (1000℃) and C (900℃), and by traveling the tube to the direction A→B→C with the speed of 2–5 cm/h. The n-type samples with about 10¹⁶ cm^-3are grown using this method. The Czochralski method is also available.
The vapor phase method is available to deposit the thin films. For instance, InAs is grown on the low temperature area by heating the closed tube loaded with In+AsCl3 together with Cl2 , which works as a carrier gas. By using this method, we can grow the epitaxial layer.
Hazard
See indium; arsenic.
Structure and conformation
The space lattice of InAs belongs to the cubic system, and its zinc-blend structure has a lattice constant of a=0.6058 nm and the nearest neighbor distance of 0.262 nm.

INDIUM ARSENIDE Upstream-Materialien And Downstream Produkte

Indiumarsenid Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

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