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Bis(diethylamino) silane (BDEAS) is a highly volatile precursor with a vapor pressure of 30 Torr at 70°C and is liquid at room temperature with a melting point of less than ?10°C and a boiling point of 188°C. It is studied and evaluated as a liquid-phase silicon precursor in the low-temperature atomic layer deposition (ALD) of hafnium silicate films. BDEAS and TDEAH are suitable precursors for the ALD of SiO2, HfO2, or HfSiOx films when used in conjunction with ozone. The composition of various HfSiOx films evaluated from RBS spectra demonstrates excellent tunability of film composition[1].

Currently, in the method of synthesizing dialkylaminosilane by the reaction of chlorosilanes with dialkylamines as a manufacturing method of dialkylaminosilane, in addition to the target dialkylaminosilane, hydrochloride salt of dialkylamine is by-produce

[1] Rajesh Katamreddy, C. Takoudis, B. Feist. “Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx.” Journal of The Electrochemical Society 155 1 (2008).