25817-87-2

yellowish brown crystal(s); fcc, a=0.4518nm; most refractory of all known metal nitrides; hardness 1640kgf/mm2; electrical resistivity 33μohm· cm; can be prepared by heating Hf in N2 or NH3 atmospheric at 1000°C–1500°C; as a 99.5% pure material, used as a sputtering target to increase electrical stability of diodes, transistors, and integrated circuits [KIR80] [KIR81] [HAW93] [CER91]

Most refractory of all nitrides.

Hafnium nitride exhibits outstanding mechanical, electrical, optical, high-temperature resistance, and corrosion resistance properties, making it highly valuable in fields such as mechanical manufacturing and microelectronics.
Nano-sized hafnium nitride finds widespread applications in the semiconductor, optoelectronics, and precision machining industries. In particular, nano-HfN thin films show great potential as high-efficiency anti-reflective protective coatings for optical windows, especially for critical optical components in aerospace systems.

Hafnium nitride can be produced either through the direct reaction of hafnium with nitrogen at 900°C, or via the reaction of hafnium halides with ammonia or a nitrogen-hydrogen gas mixture.