13709-61-0

Hazard Information

Questions And Answer

• Uses

  xenon difluoride gas phase etching barrier layer is prepared by the following steps: (1) spraying xenon difluoride gas onto the surface of the exposed barrier layer; (2) irradiating the barrier layer on the upper surface of the dielectric layer with a light beam, so that the etching rate of the barrier layer on the upper surface of the dielectric layer is higher than that of the barrier layer on the sidewalls of the trench and the connecting hole. This invention improves the etching rate of the barrier layer on the upper surface of the dielectric layer by irradiating it with a light beam, making the etching rate of the barrier layer on the upper surface of the dielectric layer higher than that of the barrier layer on the sidewalls of the trench and the connecting hole, thus avoiding over-etching of the barrier layer on the sidewalls of the trench and the connecting hole, improving the microscopic etching uniformity, and achieving better process results.;

Supplier

Related Products