Indium(III) antimonide

Химические свойства

Crystalline solid.

Физические свойства

Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water.

Использование

In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.

Подготовка

Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.

Методы производства

Intermetallic semiconductors of indium are formed from group III and group V elements, requiring very high purity of the elements (0.1 ppm).

Общее описание

This product has been enhanced for energy efficiency.

Опасность

See indium; antimony.

Структура и конформация

The space lattice of InSb belongs to the cubic system and zinc-blende-type structure called InSb-I at room temperature and under atmospheric pressure has a lattice constant of a=0.64789 nm and In–Sb=0.280 nm. A single crystal has cleavage of (110) plane. It transforms to white tin-type InSb-II at high temperatures and under high pressure.