Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3
brownish-white powder(s); -200 mesh with 99.999% purity; prepared by reacting Ge powder(s) and ammonia at 700°C–850°C; ortho-rhomb; a=1.384nm, b=0.406 nm, c=0.818 nm [CIC73] [CER91] [CRC10]
