The structure is cubic and has the fluorite arrangement.
The unit-cell parameters are: a = b= c = 4.5148 ?,
α= β = γ = 60°, cell volume = 65.07 ?3.
Large high-purity single crystals of the semiconductor
Mg2Ge have been grown by a modified
Bridgman method. Crystals grown from stoichiometric
melts were p-type with carrier concentrations at 77 K of
about 1016/cm3 and Hall mobilities near 1100 cm5/V s.
Excess magnesium placed in the melt acted as a donor
and produced n-type material.
cub crystal(s); used in semiconductor research [LID94] [MER06]
Magnesium germanide is used as primary and secondary intermediate and in chemical research. It forms germanium hydrides on exposure to hydrochloric acid.
In semiconductor research.
Structure and conformation
The space lattice of Mg2Ge belongs to the cubic system, and it has an antifluorite type structure. In
the structure, Mg occupies the F- position in CaF2, and Ge occupies the Ca2+ position.
