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Graphene field effect transistor chip
Product Name
Graphene field effect transistor chip
CAS
MF
MW
0
EINECS
MOL File
Mol File
Usage And Synthesis
Uses
Chemical Sensors
Biosensors
General Description
Graphene:
Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
Graphene Growth substrate: Copper foil, 25 μ thick
Transfer process: Wet electromechanical separation
Graphene Thickness: Single Atomic Layer
Sheet resistance on Si/SiO
2
: 900 ± 50 ohms/sq
FET mobility on Al
2
O
3
: ～3000 cm
2
/V sec
FET mobility on Si/SiO
2
: ～1500 cm
2
/V sec
FET mobility using new experimental method with unwrinkled graphene on Si/SiO
2
: ～7000 cm
2
/V sec
Material uniformity: >95 % Single layer graphene
Transparency: >97.4 %
GFET device info:
GFET Device Dirac Voltage Range 0-60 V
GFET Chip: 10 devices per chip
Yield: 90 %
Graphene field effect transistor chip Supplier
Sigma-Aldrich
Tel
021-61415566 800-8193336
Email
orderCN@merckgroup.com
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