Graphene field effect transistor chip

Uses

• Chemical Sensors
• Biosensors

General Description

• Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
• Graphene Growth substrate: Copper foil, 25 μ thick
• Transfer process: Wet electromechanical separation
• Graphene Thickness: Single Atomic Layer
• Sheet resistance on Si/SiO₂: 900 ± 50 ohms/sq
• FET mobility on Al₂O₃: ～3000 cm²/V sec
• FET mobility on Si/SiO₂: ～1500 cm²/V sec
• FET mobility using new experimental method with unwrinkled graphene on Si/SiO₂: ～7000 cm²/V sec
• Material uniformity: >95 % Single layer graphene
• Transparency: >97.4 %

• GFET Device Dirac Voltage Range 0-60 V
• GFET Chip: 10 devices per chip
• Yield: 90 %