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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

中文名称:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
英文名称:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
CAS号:
分子式:O2Si
分子量:60.0843
EINECS号:
Mol文件:Mol File
SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS) 结构式
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