SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
- CAS号:
- 英文名:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
- 中文名:
- CBNumber:CB0660183
- 分子式:O2Si
- 分子量:60.0843
- MOL File:Mol file
SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)上下游产品信息
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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)生产厂家