갈륨 세스퀴산화물

한글명:갈륨 세스퀴산화물

카스 번호12024-21-4

상품명:Gallium(III) oxide

CBNumberCB0268996

분자식Ga2O3

포뮬러 무게187.44

MOL 파일12024-21-4.mol

동의어(한글)

갈륨세스퀴산화물

화학적 성질

녹는점	1740 °C
밀도	6.44 g/mL at 25 °C
굴절률	1.92
저장 조건	Sealed in dry,Room Temperature
용해도	soluble in hot acid solutions
물리적 상태	분말 또는 덩어리
Specific Gravity	6.44
색상	하얀색
수용성	산에 용해됩니다. 물에 불용성
Merck	14,4346
안정성	안정적인. 마그네슘과 호환되지 않습니다.
InChIKey	QZQVBEXLDFYHSR-UHFFFAOYSA-N
CAS 데이터베이스	12024-21-4(CAS DataBase Reference)
EPA	Gallium trioxide (12024-21-4)

위험 및 안전 성명

안전지침서

24/25

WGK 독일

RTECS 번호

LW9650000

TSCA

Yes

HS 번호

28259090

독성

mammal (species unspecified),LDLo,intraperitoneal,10gm/kg (10000mg/kg),BEHAVIORAL: EXCITEMENTLUNGS, THORAX, OR RESPIRATION: RESPIRATORY DEPRESSIONBEHAVIORAL: ATAXIA,Gigiena Truda i Professional'nye Zabolevaniya. Labor Hygiene and Occupational Diseases. Vol. 31(6), Pg. 58, 1987.

NFPA 704:

	0
0		0

그림문자(GHS)

갈륨 세스퀴산화물 화학적 특성, 용도, 생산

개요
Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.
화학적 성질
white odourless powder
용도
In semiconductors; gas sensing; catalysis. Nanostructures as blue and UV light emitters in optoelectronic device applications.
Gallium(III) oxide has been reported in applications in lasers, phosphors, and luminescent materials. Monoclinic ß-Ga2O3 is used in gas sensors and luminescent phosphors and can be applied to dielectric coatings for solar cells. This stable oxide has also shown potential for deep-ultraviolet transparent conductive oxides, and transistor applications. Thin Ga2O3 films are of commercial interest as gas sensitive materials. ß-Gallium(III) oxide is used in the production of Ga2O3-Al2O3 catalyst.
생산 방법
Gallium oxide is formed during the annealing or heating of semiconductors containing gallium in the microelectronics industry.
일반 설명
Odorless fine white powder. Insoluble in water.
공기와 물의 반응
Insoluble in water.
반응 프로필
GALLIUM(III) OXIDE may react with acids. Heating (to 1292° F) with magnesium causes a violent reduction to metallic slate.
건강위험
SYMPTOMS: Symptoms of exposure to GALLIUM(III) OXIDE include reduction of red blood cells and platelets, anemia, skin rash and nausea.
화재위험
Flash point data for GALLIUM(III) OXIDE are not available; however, GALLIUM(III) OXIDE is probably combustible.
참고 문헌
Highly selective and rapid enrichment of phosphorylated peptides using gallium oxide‐coated magnetic microspheres for MALDI‐TOF‐MS and nano‐LC‐ESI‐MS/MS/MS analysis DOI:10.1002/PMIC.200700454
Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014) DOI:10.1002/PSSA.201470201
Synthesis and characterization of morphologically different high purity gallium oxide nanopowders DOI:10.1007/S10853-007-1869-2
Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films DOI:10.1021/JP311300E
Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering DOI:10.1088/1674-4926/31/10/103001
Patty's Toxicology, 6 Volume Set, 6th Edition

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