하프늄 탄화물

한글명:하프늄 탄화물

카스 번호12069-85-1

상품명:HAFNIUM CARBIDE

CBNumberCB0124513

분자식CHf

포뮬러 무게190.5

MOL 파일12069-85-1.mol

동의어(한글)

하프늄탄화물

하프늄탄화물(HAFNIUMCARBIDE)

화학적 성질

녹는점	2930 °C(lit.)
밀도	12.2 g/mL at 25 °C(lit.)
RTECS 번호	MG4620000
물리적 상태	가루
색상	회색
비저항	45.0 (ρ/μΩ.cm)
수용성	물에 녹지 않습니다.
Crystal Structure	Cubic, NaCl Structure
노출 한도	ACGIH: TWA 0.5 mg/m3 NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3
InChIKey	NVDNLVYQHRUYJA-UHFFFAOYSA-N
CAS 데이터베이스	12069-85-1
EPA	Hafnium carbide (HfC) (12069-85-1)

위험 및 안전 성명

유엔번호(UN No.)

UN3178

WGK 독일

TSCA

Yes

위험 등급

4.1

포장분류

III

NFPA 704:

	2
0		0

그림문자(GHS)

하프늄 탄화물 화학적 특성, 용도, 생산

화학적 성질
dark, gray, brittle solid; fcc, a=0.4640 nm; high cross section for absorption of thermal neutrons; resistivity 8.8μohm· cm; most refractory binary material known; hardness 2300kgf/mm2; used in control rods of nuclear reactors; can be prepared by heating HfO2 with lampblack under H2 at 1900°C–2300°C; used in crucible form for melting hafnium oxide, other oxides [KIR80] [HAW93] [CER91]
물리적 성질
Dark gray brittle solid, most refractory binary material known. Controls rods in nuclear reactors, crucible container for melting HfO and other oxides. 2 Corrosion resistant to liquid metals such as Nb, Ta, Mo, and W. Severe oxidation in air above 1100–1400°C and stable up to 2000°C in helium.
용도
Hafnium carbide (HfC) with a melting point over 3890°C is a refractory binary compound. HfC and NbC can also be used as refractory coatings in nuclear reactors. The mixed carbide Ta4HfC5 possesses the highest melting point of any currently known compound at 4215°C.
생산 방법
Hafnium carbide is a dark gray, brittle solid. It can be prepared by heating a mixture of the elements or by reacting hafnium tetrachloride with methane at 2100 C. Sufficient quantities of hafnium oxide or hafnium metal sponge are obtained during the large-scale production of pure zirconium for nuclear reactors. On an industrial scale, hafnium carbide can be produced from the hydrided hafnium sponge at 1500–1700 ℃ or from hafnium oxide at 2000–2200 ℃ by carburization in vacuo in the presence of hydrogen. The resulting carbide contains almost the theoretical quantity of carbon (6.30% °C) and a maximum of 0.1% free carbon (219). The hafnium carbide obtained is not a true stoichiometric compound as much as a solution of carbon at specific interstitial sites of a face-centered cubic hafnium lattice.
Hafnium carbide is inert to most reagents at room temperature but is dissolved by hydrofluoric acid solutions. Hafnium carbide reacts exothermally with halogens at 250–500 ℃to form hafnium tetrahalide, and to form hafnium oxide with oxygen above 500℃. In the presence of hydrogen, hafnium carbide slowly loses some of its carbon at higher temperatures.

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