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INDIUM ARSENIDE

CAS No.1303-11-3
Chemical Name:INDIUM ARSENIDE
CBNumber:CB7342103
Molecular Formula:AsIn
Formula Weight:189.74
MOL File:1303-11-3.mol

INDIUM ARSENIDE Property

Melting point 936°C
Density 5.69 g/cm³
refractive index 3.51
solubility insoluble in acid solutions
form 1.5 To 9.5mm Polycrystalline Pieces
color Gray
Water Solubility Insoluble in water.
Crystal Structure Cubic, Sphalerite Structure - Space Group F(-4)3m
Merck 14,4949
Exposure limits ACGIH: TWA 0.01 mg/m3; TWA 0.1 mg/m3
NIOSH: IDLH 5 mg/m3; TWA 0.1 mg/m3; Ceiling 0.002 mg/m3
EWG's Food Scores 1
FDA UNII J1A23S0911
EPA Substance Registry System Indium arsenide (InAs) (1303-11-3)

Safety

RIDADR :UN1557
TSCA :Yes
HazardClass :6.1
PackingGroup :III

NFPA 704:

	0
3		0

Hazard and Precautionary Statements (GHS)

Symbol(GHS)
Signal wordDanger
Hazard statements H301-H331-H400-H410
Precautionary statements P261-P301+P310a-P304+P340-P311a-P405-P501a

INDIUM ARSENIDE Price More Price(2)

Brand: ALFA India
Product number: ALF-022651-09
Product name : Indium arsenide, 99% (metals basis)
Purity:
Packaging: 10g
Price: ₹13904
Updated: 2022/05/26
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Brand: ALFA India
Product number: ALF-022651-04
Product name : Indium arsenide, 99% (metals basis)
Purity:
Packaging: 2g
Price: ₹5917
Updated: 2022/05/26
Buy: Buy

INDIUM ARSENIDE Chemical Properties,Usage,Production

Chemical Properties Crystals.Insoluble in acids.
Uses Indium arsenide is used in semiconductor electronics, construction of infrared detectors, terahertz radiation source, as it is a strong Photo-dember emitter, superior electron mobility and velocity, in high-power applications detector, diode lasers.
Uses In semiconductor electronics.
Uses Indium arsenide is used in semiconductor devices.
Production Methods In and As are put into a silica boat at the stoichiometric ratio. The materials are put into a silica tube together with a small amount of As. The small amount of As is heated to about 300℃ to eliminate O2 under evacuation followed by sealing off the tube. The boat is zone-refined at the speed of 2 cm/h in the first run and 5 cm/h in the following several runs. The obtained ingot is pulled out and cut by half to use as a single crystal source. Loading the source into the silica boat with roughened inner wall, the boat is put into a horizontal silica tube together with a small amount of As followed by vacuum sealing in the same manner as the first run. A single crystal is obtained by putting the silica tube into the horizontal Stockbarger furnace with three zones: A (560℃), B (1000℃) and C (900℃), and by traveling the tube to the direction A→B→C with the speed of 2–5 cm/h. The n-type samples with about 10¹⁶ cm^-3are grown using this method. The Czochralski method is also available.
The vapor phase method is available to deposit the thin films. For instance, InAs is grown on the low temperature area by heating the closed tube loaded with In+AsCl3 together with Cl2 , which works as a carrier gas. By using this method, we can grow the epitaxial layer.
Hazard See indium; arsenic.
Structure and conformation The space lattice of InAs belongs to the cubic system, and its zinc-blend structure has a lattice constant of a=0.6058 nm and the nearest neighbor distance of 0.262 nm.