1303-11-3

Crystals.Insoluble in acids.

In semiconductor electronics.

See indium; arsenic.

In and As are put into a silica boat at the stoichiometric ratio. The materials are put into a silica tube together with a small amount of As. The small amount of As is heated to about 300℃ to eliminate O2 under evacuation followed by sealing off the tube. The boat is zone-refined at the speed of 2 cm/h in the first run and 5 cm/h in the following several runs. The obtained ingot is pulled out and cut by half to use as a single crystal source. Loading the source into the silica boat with roughened inner wall, the boat is put into a horizontal silica tube together with a small amount of As followed by vacuum sealing in the same manner as the first run. A single crystal is obtained by putting the silica tube into the horizontal Stockbarger furnace with three zones: A (560℃), B (1000℃) and C (900℃), and by traveling the tube to the direction A→B→C with the speed of 2–5 cm/h. The n-type samples with about 10¹⁶ cm^-3are grown using this method. The Czochralski method is also available.
The vapor phase method is available to deposit the thin films. For instance, InAs is grown on the low temperature area by heating the closed tube loaded with In+AsCl3 together with Cl2 , which works as a carrier gas. By using this method, we can grow the epitaxial layer.

The space lattice of InAs belongs to the cubic system, and its zinc-blend structure has a lattice constant of a=0.6058 nm and the nearest neighbor distance of 0.262 nm.