Description Reference
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TETRAKIS(DIETHYLAMINO)ZIRCONIUM

Description Reference
TETRAKIS(DIETHYLAMINO)ZIRCONIUM Structure
TETRAKIS(DIETHYLAMINO)ZIRCONIUM
  • CAS No.13801-49-5
  • Chemical Name:TETRAKIS(DIETHYLAMINO)ZIRCONIUM
  • CBNumber:CB5264241
  • Molecular Formula:C4H11NZr
  • Formula Weight:164.36
  • MOL File:13801-49-5.mol
TETRAKIS(DIETHYLAMINO)ZIRCONIUM Property
  • Boiling point 128 °C/0.05 mmHg (lit.)
  • Density 1.026 g/mL at 25 °C (lit.)
  • refractive index n20/D 1.51(lit.)
  • Flash point 54 °F
  • storage temp. 2-8°C
  • form liquid
  • color yellow
  • Sensitive Moisture Sensitive
  • UNSPSC Code 12352300
  • NACRES NA.23
Safety
  • Hazard Codes  :F,Xi
  • Risk Statements  :11-14-36/37/38
  • Safety Statements  :16-26-36
  • RIDADR  :UN 3398 4.3/PG 2
  • WGK Germany  :3
  • HazardClass  :4.3
  • PackingGroup  :II
Hazard and Precautionary Statements (GHS)
  • Symbol(GHS)
  • Signal wordDanger
  • Hazard statements H225-H261-H315-H319-H335
  • Precautionary statements P210-P231+P232-P261-P305+P351+P338-P422

TETRAKIS(DIETHYLAMINO)ZIRCONIUM Chemical Properties,Usage,Production

  • Description Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method3.
  • Reference
    1. Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992.
    2. Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001.
    3. Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.
  • Uses Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions.
  • General Description Atomic number of base material: 40 Zirconium
  • reaction suitability core: zirconium
TETRAKIS(DIETHYLAMINO)ZIRCONIUM Preparation Products And Raw materials
Raw materials
Preparation Products
TETRAKIS(DIETHYLAMINO)ZIRCONIUM Suppliers
Global(68)Suppliers
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TETRAKIS(DIETHYLAMINO)ZIRCONIUM Spectrum
13801-49-5, TETRAKIS(DIETHYLAMINO)ZIRCONIUMRelated Search:
  • Zirconium
  • Vapor Deposition Precursors
  • metal amide complex
  • Precursors by Metal
  • 医用原料
  • 金属催化剂
  • 化工原料
  • C16H40N4Zr
  • C4H11N14Zr
  • ZrNCH2CH324
  • C2H52N4Zr
  • 四(二乙基氨基)锆(IV)
  • 四(二乙氨基)锆
  • 四(乙氨基)锆
  • 四(乙氨基)锆(IV)
  • 四(二乙氨基)锆(IV)
  • 13801-49-5
  • TETRAKIS(DIETHYLAMINO)ZIRCONIUM ISO 9001：2015 REACH
  • amido)zirconium(IV)
  • ZIRCONIUM DIETHYLAMIDE
  • TETRAKIS(DIETHYLAMINO)ZIRCONIUM
  • tetrakis(diethylamido)zirconium(iv)
  • Tetrakis(diethylamino)zirconium,99%
  • Tetrakis(diethylamino)zirkonium
  • TETRAKIS(DIETHYLAMIDO)ZIRCONIUM(IV), ELECTRONIC GRADE, 99.99+%
  • Zirconium, tetrakis(diethylamino)-
  • Tetrakis(diethylaMino)zirconiuM(IV), 99%

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