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HQ graphene高品质石墨烯及二维材料 新品

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北京 更新日期:2026-08-06

维百奥(北京)生物科技有限公司

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联系人:王经理
电话:13621190864拨打
手机:13691409741 拨打
邮箱:info@vicbio.com

产品详情:

中文名称:
HQ graphene高品质石墨烯及二维材料
品牌:
HQ graphene
产品类别:
热门产品

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HQ Graphene是一家位于荷兰的二维材料制造商,专注于大尺寸、高纯度层状单晶的生长与表征。产品涵盖二维半导体、石墨及绝缘体、硫化物与碲化物、拓扑材料、磁性材料和超导晶体,并可提供定制晶体生长及二维材料转移系统。


北京普莱凯 | 科研级材料供应商

  更多产品信息及报价,请联系我们的销售人员 18648182152(微信同号)


◆HQ graphene产品线

● 二维半导体单晶:MoS₂、MoSe₂、WS₂、WSe₂、GaSe、InSe、ReS₂和ReSe₂等层状单晶具有良好的机械剥离性能,可用于场效应晶体管、光电探测器、传感器及基础物性研究。

● 石墨与绝缘二维晶体:高定向热解石墨(HOPG)和天然石墨可作为单层及少层石墨烯机械剥离的母材;h-BN、白云母和金云母则可用于二维器件绝缘层、封装层及平整衬底。

硫化物、硒化物与碲化物单晶:HfS₂、SnS₂、TiS₃、ZrS₃、HfSe₂、SnSe₂、MoTe₂、WTe₂及ZrTe₅等材料覆盖不同带隙和电子结构,适用于二维电子学、光电器件及量子输运研究。

● 拓扑与Weyl材料:Bi₂Se₃、Bi₂Te₃、BiSbTeSe₂、MnBi₂Te₄、TaIrTe₄和PtBi₂等单晶可用于拓扑绝缘体、反铁磁拓扑材料及Weyl半金属研究。

● 磁性二维晶体:CrI₃、CrBr₃、Cr₂Ge₂Te₆、Fe₃GeTe₂、FePS₃和MnPS₃等材料涵盖铁磁、反铁磁及磁性拓扑体系,可用于自旋电子学、磁性异质结和低维磁性研究。

● 超导与电荷密度波晶体:NbSe₂、NbS₂、TaS₂、TaSe₂、NbSe₃及ZrTe₃等单晶具有超导或电荷密度波特性,可用于低温输运、相变和量子凝聚态研究。

● 定制晶体与转移系统:可根据成分、掺杂比例和晶体结构定制二维单晶,并提供用于机械剥离、堆叠和范德华异质结制备的二维材料转移系统。

HQ Graphene  HQ Graphene  HQ Graphene  HQ Graphene


◆HQ graphene产品列表

Crystal品名Properties
Custom made crystalCustom Made 2D crystalsHigh purity and quality crystal
AgBiP2Se6AgBiP2Se6 (Silver Bismuth Diphosphorus Hexaselenide)Semiconductor
AgScP2S6AgScP2S6 (Silver Scandium Diphosphorus Hexasulfide)Semiconductor
As2Te3 (alpha phase)As2Te3 (alpha phase Arsenicum Telluride)Semiconductor, Thermoelectric
Bi2S3Bi2S3 (Bismuth Sulfide)Semiconductor
Bi2Se3Bi2Se3 (Bismuth Selenide)Topological insulator
Bi2(SexTe1-x)3Bi2(SexTe1-x)3 (Bismuth Selenide Telluride)Topological insulator
Bi2Te3Bi2Te3 (Bismuth Telluride)Topological insulator, Thermoelectric
(BixSb1-x)2(SeyTe1-y)3(BixSb1-x)2(SeyTe1-y)3 (Bismuth Antimony Selenide Telluride)Topological insulator
(BixSn1-x)2(SeyTe1-y)3(BixSn1-x)2(SeyTe1-y)3 (Bismuth Tin Selenide Telluride)Topological insulator
BiTeIBiTeI (Bismuth Tellurium Iodide)Semiconductor
h-Boron nitrideHexagonal Boron Nitride (h-BN, BN2A1)Insulator
BSCCOBSCCO (Bi2Sr2CaCu2O8+x)Superconductor
CeTe3CeTe3 (Cerium Tritelluride)CDW
Co1/3TaS2Co1/3TaS2 (Tricobalt Tantalum Disulfide)Antiferromagnetic semimetal
CoPS3CoPS3 (Cobalt Phosphorus Sulfide)Antiferromagnetic insulator
Cr2Ge2Te6 (CrGeTe3)Cr2Ge2Te6 (CrGeTe3)Ferromagnetic insulator, semiconductor
Cr0.15(Bi0.1Sb0.9)1.85Te3Cr0.15(Bi0.1Sb0.9)1.85Te3Ferromagnetic topological insulator
CrBr3CrBr3 (Chromium Bromide)Ferromagnetic semiconductor
CrCl3CrCl3 (Chromium Trichloride)Antiferromagnetic insulator
Crl3CrI3 (Chromium Triiodide)Ferromagnetic insulator
CrOClCrOCl (Chromium Oxychloride)Antiferromagnetic insulator
CrPS4CrPS4 (Chromium Thiophosphate)Antiferromagnetic semiconductor
CrSBrCrSBr (Chromium Sulfide Bromide)Antiferromagnetic semiconductor
Cr2Si2Te6 (CrSiTe3)Cr2Si2Te6 (CrSiTe3)Ferromagnetic Semiconductor
CrTe2 (1T phase)CrTe2 (1T Chromium Ditelluride)Ferromagnetic metal
CrVI6CrVI6 (Chromium Vanadium Hexaiodide)Topological ferromagnet
CuCrP2S6CuCrP2S6 (Copper Chromium Thiophosphate)Ferroelectric, antiferromagnetic semiconductor
CulnP2S6CuInP2S6 (CIPS)Ferroelectric semiconductor
CuInP2Se6CuInP2Se6 (Copper Indium Selenophosphate)Ferroelectric semiconductor
FeCr3Te6FeCr3Te6 (Iron Chromium Telluride)Ferromagnetic metal
Fe3GaTe2Fe3GaTe2 (Triiron Gallium Ditelluride)Ferromagnetic metal
Fe3GeTe2Fe3GeTe2 (Triiron Germanium Ditelluride)Ferromagnetic metal
Fe4GeTe2Fe4GeTe2 (Tetrairon Germanium Ditelluride)Ferromagnetic metal
Fe5GeTe2Fe5GeTe2 (Pentairon Germanium Ditelluride)Ferromagnetic metal. Contact us for possibilities of Fe substitution with other metals.
Fe5GeTe2 (Co substituted)Fe5GeTe2 (Co substituted)Ferromagnetic metal
Fe5GeTe2 (Ni substituted)Fe5GeTe2 (Ni substituted)Ferromagnetic metal
FeCl2FeCl2 (Iron Dichloride)Ferromagnetic insulator
FePS3FePS3 (Iron Thiophospate)Antiferromagnetic insulator
FePSe3FePSe3 (Iron Phosphorus Triselenide)Antiferromagnetic insulator
FeSeTeFeSeTe (Iron Selenide Telluride)Superconductor
FeTeFeTe (Iron Telluride)Semimetal
GaSGaS (beta phase Gallium sulfide)Semiconductor
GaSeGaSe (2H phase Gallium Selenide)Semiconductor
GaTeGaTe (Gallium Telluride)Semiconductor
GdTe3GdTe3 (Gadolinium Tritelluride)Antiferromagnetic metal, CDW
GePGeP (Germanium Phosphide)Semiconductor
GeSGeS (Germanium sulfide)Semiconductor
GeSeGeSe (Germanium Selenide)Semiconductor
GeSe2GeSe2 (Germanium disellenide)Semiconductor
Graphite HOPGHOPG (Highly oriented pyrolytic graphite)Metal
Graphite NaturalNatural graphiteMetal
HfS2HfS2 (Hafnium Disulfide)Semiconductor
HfSe2HfSe2 (Hafnium Diselenide)Semiconductor
HfTe2HfTe2 (1T phase Hafnium Ditelluride)Semimetal
HfTe5HfTe5 (Hafnium Pentatelluride)Topological insulator
In2Se3 (2H alpha phase)In2Se3 (2H alpha phase Indium Selenide)Semiconductor
In2Se3 (beta phase)In2Se3 (beta phase Indium Selenide)Semiconductor
In2Se3 (3R alpha phase)In2Se3 (3R alpha phase Indium Selenide)Semiconductor
In2Se3 (gamma phase)In2Se3 (gamma phase Indium Selenide)Semiconductor
InSeInSe (gamma phase Indium Selenide)Semiconductor
LaTe3LaTe3 (Lanthanum Tritelluride)Metal, CDW
MICA muscovite V1MICA MuscoviteInsulator
MICA phlogopiteMICA PhlogopiteInsulator
MnBi2Te4MnBi2Te4 (Manganese Bismuth Telluride)Antiferromagnetic topological insulator
MnPS3MnPS3 (Manganese Phosphorus Trisulfide)Antiferromagnetic insulator
MnPSe3MnPSe3 (Manganese Phosphorus Triselenide)Antiferromagnetic semiconductor
MoO3MoO3 (Molybdenum Trioxide)Semiconductor
MoOCl2MoOCl2 (Molybdenum Oxychloride)Metal
MoS2 (synthetic)MoS2 (2H Molybdenum Disulfide)Semiconductor
MoS2 (3R phase)3R-MoS2 (Molybdenum Disulfide)Semiconductor
MoS2~0.5-0.7cmMoS2~0.5-0.7cm (2H Molybdenum Disulfide)Semiconductor
MoS2~1 cm or ~1.5cm2H-MoS2 natural (natural MoS2 hexagonal shaped)Semiconductor
MoS2 with Nb dopingMoS2 with Nb doping (Molybdenum Disulfide)Semiconductor
MoSe2MoSe2 (2H Molybdenum Diselenide)Semiconductor
Mo(SxSe1-x)2MoSSe (Molybdenum Sulfide Selenide alloy)Semiconductor
MoTe2 (1T phase)1T-MoTe2 ( 1T Molybdenum Ditelluride)Semimetal, Weyl Semimetal
MoTe2 (2H phase)MoTe2 (2H Molybdenum Ditelluride)Semiconductor
MoxW1-xS2MoWS2 (Molybdenum Tungsten Disulfide alloy)Semiconductor
MoxW1-xSe2MoWSe2 (Molybdenum Tungsten Diselenide alloy)Semiconductor
MoxW1-xTe2MoWTe2 (Molybdenum Tungsten Ditelluride alloy)Semiconductor
Nb3I8Nb3I8 (Niobium Iodide)Ferromagnet
NbIrTe4NbIrTe4 (Niobium Iridium Tetratelluride)Semimetal
NbOBr2NbOBr2 (Niobium Oxide Dibromide)Semiconductor
NbOCl2NbOCl2 (Niobium Oxychloride)Semiconductor
NbOI2NbOI2 (Niobium Oxyiodide)Semiconductor
NbS2 (2H phase)NbS2 (2H Niobium Disulfide)Superconductor, CDW
NbS2 (3R phase)3R-NbS2 (3R phase Niobium Disulfide)Metal
NbS3NbS3 (Niobium Trisulfide)Semiconductor
NbSe2 (2H phase)NbSe2 (2H Niobium Diselenide)Superconductor, CDW
NbSe2 (4H phase)NbSe2 (4H Niobium Diselenide)Superconductor, CDW
NbSe3NbSe3 (Niobium Triselenide)Superconductor, CDW
Nb(SxSe1-x)2NbSSe alloySuperconductor
NbTe2NbTe2 (Niobium Ditelluride)Metal, Superconductor
NiI2NiI2 (Nickel Iodide)Antiferromagnetic insulator
NiPS3NiPS3 (Nickel Phosphorus Trisulfide)Antiferromagnetic insulator
NiP(SxSe1-x)3NiP(SxSe1-x)3 (Nickel Phosphorus Sulfide Selenide)Substitution up to 50% Se, contact us for more information.
NiTe2NiTe2 (Nickel Ditelluride)Semimetal
Pb3Sn4FeSb2S14Pb3Sn4FeSb2S14 (Cylindrite)Ferromagnetic insulator
Pb5Sn3Sb2S14Pb5Sn3Sb2S14 (Franckeite)Semiconductor
PbI2PbI2 (Lead Iodide)Semiconductor
PbSnS2PbSnS2 (Teallite)Semiconductor
PdSe2PdSe2 (Palladium Diselenide)Semiconductor
PdTe2PdTe2 (Palladium Ditelluride)Metal, Superconductor
Phosphorus-As alloyP-As (Phosphor-Arsenic alloy)Semiconductor
Phosphorus (Black)Black PhosphorusSemiconductor
Phosporus (Violet)Violet PhosphorusSemiconductor
PtBi2PtBi2 (Platinum Bismuthide)Weyl Semimetal
PtS2PtS2 (Platinum Sulfide)Semiconductor
PtSe2PtSe2 (Platina Diselenide)Semimetal
PtTe2PtTe2 (Platina Ditelluride)Metal
ReS2ReS2 (Rhenium Disulfide)Semiconductor
ReSe2ReSe2 (Rhenium Diselenide)Semiconductor
Re(SxSe1-x)2ReSSe (Rhenium Sulfide Selenide)Semiconductor
RuCl3RuCl3 (Ruthenium Trichloride)Antiferromagnetic insulator
Sb2Se3Sb2Se3 (Antimony Selenide)Topological insulator, semiconductor
Sb2Te3Sb2Te3 (Antimony Telluride)Topological insulator, semiconductor
SbSISbSI (Antimony Sulfoiodide)Ferroelectric semiconductor
SnP2S6SnP2S6 (Tin Diphosphorus Hexasulfide)Semiconductor
SnP2Se6SnP2Se6 (Tin Diphosphorus Hexaselenide)Semiconductor
SnSSnS (Tin (II) sulphide)Semiconductor
SnS2SnS2 (2H Tin Disulfide)Semiconductor
SnSeSnSe (Tin Selenide)Semiconductor
SnSe2SnSe2 (Tin Diselenide)Semiconductor
Ta1/3FeS2Ta1/3FeS2 (Tritantalum Iron Hexasulfide)Ferromagnet
Ta1/4FeS2Ta1/4FeS2 (Tritantalum Iron Hexasulfide)Ferromagnet
Ta2NiS5Ta2NiS5 (Ditantalum Nickel Pentasulfide)Semiconductor, Insulator
Ta2NiSe5Ta2NiSe5 (Ditantalum Nickel Pentaselenide)Semiconductor, Insulator
Ta2NiSe7Ta2NiSe7 (Ditantalum Nickel Heptaselenide)Metal, CDW
Ta2Ni(Se1−xSx)5TaNiSeS5 alloySemiconductor, Insulator
TaIrTe4TaIrTe4 (Tantalum Iridium Tetratelluride)Weyl semimetal
TaS2 (1T phase)1T-TaS2 (1T phase Tantalum Disulfide)Semiconductor, CDW
TaS2 (2H phase)TaS2 (2H Tantalum Disulfide)Metal, Superconductor, CDW
TaSe2 (2H phase)TaSe2 (2H Tantalum Diselenide)Metal, Superconductor, CDW
TaSe3TaSe3 (Tantalum Triselenide)Superconductor
TaTe2TaTe2 (Tantalum Ditelluride)Metal, CDW
TiS2 (1T phase)TiS2 (1T Titanium Disulfide)Semimetal
TiS3TiS3 (Titanium Trisulfide)Semiconductor
TiSe2TiSe2 (1T phase Titanium Diselenide)Semimetal, CDW
TiSe2 with Cu dopingTiSe2 with Cu doping (Titanium Diselenide)Semimetal, Superconductor
TiTe2TiTe2 (Titanium Ditelluride)Semimetal
VBr3VBr3 (Vanadium Tribromide)Ferromagnetic semiconductor
VI3VI3 (Vanadium Tri-iodide)Ferromagnetic semiconductor
VSe2VSe2 (1T Vanadium Diselenide)Metal, CDW
VTe2VTe2 (Vanadium Ditelluride)Metal, CDW
WS2 (2H phase)WS2 (2H Tungsten Disulfide)Semiconductor
WSe2WSe2 (Tungsten Diselenide)Semiconductor
WSe2 with Nb dopingWSe2 with Nb doping (Tungsten Diselenide)Semiconductor
WSe2 with Re dopingWSe2 with Re doping (Tungsten Diselenide)Semiconductor
WSxSe1-xWSSe (Tungsten Sulfide Diselenide)Semiconductor
WTe2WTe2 (Tungsten Ditelluride)Semimetal, Weyl Semimetal
ZnPS3ZnPS3 (Zinc phosphorus Trisulfide)Insulator
ZrGeTeZrGeTe (Zirconium Germanium Telluride)Ferromagnet
ZrS3ZrS3 (Zirconium Trisulfide)Semiconductor
ZrSe3ZrSe3 (Zirconium Triselenide)Semiconductor
Zr(SexTe1-x)3ZrSeTe (Zirconium Selenide Telluride)Semimetal, contact us for more information.
ZrTe3ZrTe3 (Zirconium Tritelluride)Semimetal, Superconductor, CDW
ZrTe5ZrTe5 (Zirconium Pentatelluride)Semimetal
2D_CL_PCPolymer for fast production of 2D heterostructures (2D_CL_PC)Polymer for hetrostructure fabrication


HQ graphene;HQ graphene代理;

公司简介

维百奥(北京)生物科技有限公司成立于2014年,经营范围包括: 技术服务、技术开发、技术咨询、技术交流、技术转让、技术推广;仪器仪表制造;仪器仪表销售;仪器仪表修理;化工产品生产(不含许可类化工产品);化工产品销售(不含许可类化工产品);专用化学产品制造(不含危险化学品);专用化学产品销售(不含危险化学品);计算机系统服务;数据处理和存储支持服务;软件开发;工程技术服务(规划管理、勘察、设计、监理除外);新材料技术推广服务;进出口代理;货物进出口;技术进出口。(除依法须经批准的项目外,凭营业执照依法自主开展经营活动)(不得从事国家和本市产业政策禁止和限制类项目的经营活动。)

成立日期 (13年)
注册资本 50万人民币
员工人数 1-10人
年营业额 ¥ 300万-500万
经营模式 试剂
主营行业 生化试剂

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