InP/ZnS量子点

由于其激子波尔半径比Ⅱ-Ⅵ族的大，量子限域效应明显，消光系数大，发射光谱频率覆盖整个可见光范围，并延伸至近红外区域，尤其是不含有重金属元素，InP量子点在平板显示背光源、照明、生物医学标记、指纹识别，以及太阳能领域具有广泛的应用。 星烁纳米应用独特专有技术合成的InP/ZnS量子点具有稳定性好，荧光发射峰范围广，发光效率高，波长可调等诸多优异特性。

InP is the best investigated III-V QDs. Regarding their bulk band gaps of 1.35 eV, InP QDs are considered as the most viable alternatives to Cd-based QDs for visible wavelength emissions. Due to their large exciton Bohr radius, high extinction co-efficiency, broad range of emissions that covering the whole visible range and extends to the near infrared, and containing no heavy metal elements, InP QDs have great potential to be used in flat panel display backlighting, QD-LED, lighting devices, biomedical markers, fingerprinting, and solar cell applications. Synthesized using our proprietary unique technology, our InP/ZnS QDs have uniform size distribution, high quantum yield, and high stability, can be used in optoelectronic devices, solar cells, biomarkers, and other fields.