氮化铝,24304-00-5

一般描述

Aluminum Nitride(AlN) is a non-oxide semiconductor material with a hexagonal Wurtzite crystal structure. It has a wide direct bandgap of 6.12 eV. AIN is a suitable additive in making thermal grease and electric cable insulation owing to its very high thermal conductivity (300?W/(m. K)) and electrical resistivity. It is also used in microelectronics, electroluminescent devices, and sensors because of its non-toxicity, superior thermal, electrical, mechanical, and chemical properties.

应用

Aluminum Nitride can be used as a:
ceramic material in the preparation of nano capsulated phase change material for building thermal management systems. matrix in the preparation of metacomposites along with graphene platelets to improve their thermal conductive properties. foaming agent in the preparation of foam glass using glass waste.
It is also used to prepare ceramic matrix composite material along with molybdenum to generate high-energy X-rays.