Sapphire substrate, 50.8mm dia x 0.332mm thick, EPI polished
Sapphire substrate, 50.8mm dia x 0.332mm thick, EPI polished two sides, C-axis, HEMCOR single crystal|蓝宝石基片,直径50.8MM X 厚度0.332MM,磨光EPI两侧,C- 基本信息更多
- 中文名称:蓝宝石基片,直径50.8MM X 厚度0.332MM,磨光EPI两侧,C-
- 中文同义词: 蓝宝石基片,直径50.8MM X 厚度0.332MM,磨光EPI两侧,C- 蓝宝石基片,50.8MM 直径 X 0.332MM 厚,EPI 两面抛光,C-轴,HEMCOR单晶体 蓝宝石基片,直径50.8MM X 厚度0.332MM,磨光EPI两侧,C-轴,HEMCOR单晶体
- 英文名称:Sapphire substrate, 50.8mm dia x 0.332mm thick, EPI polished two sides, C-axis, HEMCOR single crystal
- 英文同义词: Sapphire substrate, 50.8mm dia x 0.332mm thick, EPI polished two sides, C-axis, HEMCOR single crystal Sapphire substrate, 50.8mm dia x 0.332mm thick, EPI polished two sides, C-axis, HEMCOR single crysta
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- Mol文件:Mol File
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