기본 속성

SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS) 구조식 이미지

SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

한글명:SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

카스 번호

상품명:SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

CBNumberCB6660185

분자식O2Si

포뮬러 무게60.0843

MOL 파일Mol file