Uses
Electronic grade in semiconductor devices,
injection lasers, and experimental solar cells.
Uses
It is used as the substrate for the low pass interference filter utilizing the steep rise in the transmittance at λ: 0.96 mm.
Definition
A brittle metallic mass, mp 1070C, slightly soluble
in mineral acids.
Production Methods
In the case of synthesizing a single crystal by mixing In and P stoichiometrically, it needs to devise
the structure of the furnace. A long quartz tube encapsuled with InP is put into the horizontal
two zones furnace and the first zone is controlled at 530℃–550℃ to keep the vapor pressure of P
at 15–20 atm. The second zone is heated at 1100℃ to melt InP. A single crystal is grown by
decreasing the temperature of the first zone slowly.
In the case of depositing a thin film by the vapor phase method, InP and I2 or Cl2 are enclosed in
the quartz tube and the InP vapor is transported to the low temperature zone by I2 or Cl2 gas.
Epitaxial films are grown by this method.
Hazard
Probable carcinogen. See indium.
Structure and conformation
The space lattice of InP belongs to the cubic system, and its zinc blend structure has a lattice
constant of a=0.58688 nm and In–P=0.254 nm.
