Synthesis
High-quality molybdenumdiselenide few-layerfilms aredirectly grown on substrates (SiO2/Si) via the chemical vapour deposition (CVD) method.
Application
Molybdenum diselenide few-layerfilms show great potential in energy processing and storage devices (such aslithium and sodium ion batteries) due to their large interlayer spacing (0.64 nm) and higher electrical conductivity. It has also been widely used in lasers, capacitors, photodetectors, and photoelectrochemical cells as catalysts for hydrogen evolution reactions (HERs).
Uses
Molybdenum diselenide (MoSe2) few-layerfilms have electrical and optical properties that are dependent on the number of layers a film has. Few-layerMoSe2nanosheets have a high surface area and unique electronic (quasiparticle bandgap) properties due to interlayer coupling and screening effects. The band gap varies from 1.50 eV (in a monolayer) to 1.1 eV (in a bulk counterpart).
