SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)
- CAS号:
- 英文名:SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)
- 中文名:
- CBNumber:CB9660186
- 分子式:O2Si
- 分子量:60.0843
- MOL File:Mol file
SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)上下游产品信息
上游原料
下游产品
SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)生产厂家
