Clear colorless to faintly yellow liquid
bp 99–100 °C; n20
D 1.4040; d 0.752 g cm?3.
Tetramethyldisilazane is used as a gas chromatographic derivatizing reagent. Further, it reacts with phenol to prepare dimethylphenoxysilane. In addition, it is used in electronic, polymer and pharmaceutical industries.
1,1,3,3-Tetramethyldisilazane is widely used in intramolecular hydrosilation of allyl alcohols, homoallyl
alcohols, and homopropargyl alcohols for the regio- and
stereoselective synthesis of polyols
Properties and Applications
The ICP CVD synthesis of SiCxNy: H thin films using 1,1,3,3-tetramethyldisilazane (TMDSZ ) as a single-source precursor and argon as a gas-activator[1]. Using TMDSZ as the single-source compound produced amorphous hydrogenated silicon carbonitride (a-SiCN: H) films, whereas no such films were formed when HMDSZ was used, which was attributed to the lack of Si–H bond in HMDSZ. Under the collision-free condition, the formation of ?CH3, NH3, and DMSA was demonstrated from the decomposition of TMDSZ on the heated W filament. Free-radical short-chain reactions dominate the secondary gas-phase reactions of TMDSZ in the reactor setup. The short-chain reaction is initiated by the formation of methyl radicals via the cleavage of the Si–CH3 bonds of TMDSZ. The H abstraction by the produced methyl radicals from the Si–H or the C–H bond in various stable molecules (e.g., TMDSZ) propagates the chain with a resulting radical, which recombines with another radical to terminate the chain reactions, producing a series of products in the high-mass region[2].
[1] Maksim N. Chagin. “Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane.” Coatings (2022).
[2] James Michael Stevenson, Eric Ampong and Yujun Shi*. “Understanding the Reaction Chemistry of 1,1,3,3-Tetramethyldisilazane as a Precursor Gas in a Catalytic Chemical Vapor Deposition Process.” The Journal of Physical Chemistry A 127 44 (2023): 9185–9195.
