2, 4, 6, 8-TETRAMETHYLCYCLOTETRASILOXANE can be used as the precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, and gate dielectrics in thin-film transistors (TFT) (for example, for the preparation of ultralow dielectric constant pSiCOH film), and is a component of photochemically formed SiOX monolayers on TiO. It is a good impregnant of photoelectric material. It can be used for the manufacturing of modified siloxane with defined hydrogen content and chain quality.
Colorless or yellowish transparent liquid
2,4,6,8-Tetramethylcyclotetrasiloxane can occur addition reaction with unsaturated alkenes, so it’s utilized widely to synthesize variety functional reactive silicone fluids which is used to form silicone block copolymer, or used as crosslinker of vinyl addition silicone rubber.
Tetramethyl-cyclotetrasiloxane is a good impregnant of photoelectric material. It is used to manufacture of modified siloxane with defined hydrogen content and chain quantity. It is also used in production of silicone polymers and acts as a precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics and semiconductors.
2, 4, 6, 8-Tetramethylcyclotetrasiloxane (TMCTS) is an important precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics, semiconductors and other applications
Atomic number of base material: 14 Silicon
Flammability and Explosibility
Flammable
The synthesis process of 2,4,6,8-Tetramethylcyclotetrasiloxane is as follows. A 1-L four-necked flask equipped with a thermometer, stirrer, column packed with cylindrical glass of about 1x1 mm to a height of 500 mm, water-cooled condenser, outlet tube, and distillate receiver was connected to a vacuum pump. To the flask were fed 100 g of trimethylsiloxy end-capped dimethylpolysiloxane having a viscosity of 10,000 centistokes at 25°C and 1.0 g of the catalyst (i) synthesized above, after which agitation was commenced. While the flask interior was kept under a reduced pressure of 50 mmHg, the flask was heated at 250-260°C using a mantle heater. A fraction distilled out for 14 hours was collected (45 g). The residue (31 g) was a clear liquid. yeild= 52%
https://www.alfa.com/zh-cn/catalog/L16642/
http://www.sigmaaldrich.com/catalog/product/aldrich/512990?lang=en®ion=US
Grill, A., and V. Patel. "Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor." Journal of Applied Physics 104.2(2008):107.
Zhang, Jianming, D. S. Wavhal, and E. R. Fisher. "Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas." Journal of Vacuum Science & Technology A Vacuum Surfaces & Films 22.1(2004):201-213.
Fujino, Katsuhiro, et al. "Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition, Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone." Japanese Journal of Applied Physics 33. 4A (1994):2019-2024.
