(3,3-Dimethyl-1-butyne)dicobalt hexacarbonyl is an important precursor for the preparation of cobalt metal, cobalt nitride, cobalt silicides, etc., and exhibits excellent performance, especially for applications involving cobalt barrier layers/substrates, co-capping layers, and eutectic seed layers. In the case of barrier layers and seed layers, the cobalt film displays high conductivity in subsequent seed formation and electroplating steps.
Under the protection of nitrogen atmosphere, cobalt carbonyl reagent and 1800 g of hydrocarbon solvent were added into the reactor, followed by temperature control at 10 °C. Then, 0.1 g of ionic liquid-modified graphene oxide material and 25 g of tert-butylacetylene were slowly added to the system. After the addition was completed, the mixture was stirred for reaction for 5 h under nitrogen atmosphere. After the reaction, filtration was carried out, and the obtained filtrate was distilled to remove volatile components, yielding the crude product of dicobalt hexacarbonyl (3,3-dimethyl-1-butyne), which was then purified to obtain pure (3,3-Dimethyl-1-butyne)dicobalt hexacarbonyl.
