SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS) 化学構造式

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)

化学名:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)

CAS番号.

英語名:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)

CBNumberCB3660184

MFO2Si

MW60.0843