SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
Bezeichnung:SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
Englisch Name:SILICON(IV) OXIDE SPUTTERING TARGET, 76.2MM (3.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)
CBNumberCB6660185
SummenformelO2Si
Molgewicht60.0843
MOL-DateiMol file