Graphene field effect transistor chip

Graphene field effect transistor chip Chemische Eigenschaften,Einsatz,Produktion Methoden

• Verwenden

  • Chemical Sensors
  • Biosensors

• Allgemeine Beschreibung

  Graphene:
  
  • Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
  • Graphene Growth substrate: Copper foil, 25 μ thick
  • Transfer process: Wet electromechanical separation
  • Graphene Thickness: Single Atomic Layer
  • Sheet resistance on Si/SiO₂: 900 ± 50 ohms/sq
  • FET mobility on Al₂O₃: ～3000 cm²/V sec
  • FET mobility on Si/SiO₂: ～1500 cm²/V sec
  • FET mobility using new experimental method with unwrinkled graphene on Si/SiO₂: ～7000 cm²/V sec
  • Material uniformity: >95 % Single layer graphene
  • Transparency: >97.4 %
  
  GFET device info:
  
  
  • GFET Device Dirac Voltage Range 0-60 V
  • GFET Chip: 10 devices per chip
  • Yield: 90 %

Graphene field effect transistor chip Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

Global(1)Suppliers