2,4,6,8-Tetramethylcyclotetrasiloxane

Bezeichnung:2,4,6,8-Tetramethylcyclotetrasiloxane

CAS-Nr2370-88-9

Englisch Name:2,4,6,8-Tetramethylcyclotetrasiloxane

CBNumberCB1453337

SummenformelC4H16O4Si4

Molgewicht240.51

MOL-Datei2370-88-9.mol

2,4,6,8-Tetramethylcyclotetrasiloxane physikalisch-chemischer Eigenschaften

Schmelzpunkt	−69 °C(lit.)
Siedepunkt	134 °C(lit.)
Dichte	0.986 g/mL at 25 °C(lit.)
Dampfdruck	0.05-479Pa at 20℃
Brechungsindex	n20/D 1.387(lit.)
Flammpunkt	76 °F
storage temp.	2-8°C
Aggregatzustand	liquid
Wichte	0.991
Farbe	Colorless to Almost colorless
Wasserlöslichkeit	Miscible with most organic solvents. Immiscible with water.
Sensitive	Moisture Sensitive
Hydrolytic Sensitivity	3: reacts with aqueous base
BRN	1787074
InChIKey	BQYPERTZJDZBIR-UHFFFAOYSA-N
LogP	-2.4-5.54 at 25℃
CAS Datenbank	2370-88-9(CAS DataBase Reference)
EPA chemische Informationen	Cyclotetrasiloxane, 2,4,6,8-tetramethyl- (2370-88-9)

Sicherheit

Kennzeichnung gefährlicher	Xi
R-Sätze:	10-36
S-Sätze:	16-26-36
RIDADR	UN 1993 3/PG 3
WGK Germany	3
F	10-21
TSCA	Yes
HazardClass	3
PackingGroup	III
HS Code	29319090

Gefahreninformationscode (GHS)

2,4,6,8-Tetramethylcyclotetrasiloxane Chemische Eigenschaften,Einsatz,Produktion Methoden

R-Sätze Betriebsanweisung:
R10:Entzündlich.
R36:Reizt die Augen.
S-Sätze Betriebsanweisung:
S16:Von Zündquellen fernhalten - Nicht rauchen.
S26:Bei Berührung mit den Augen sofort gründlich mit Wasser abspülen und Arzt konsultieren.
S36:DE: Bei der Arbeit geeignete Schutzkleidung tragen.
Beschreibung
2, 4, 6, 8-TETRAMETHYLCYCLOTETRASILOXANE can be used as the precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, and gate dielectrics in thin-film transistors (TFT) (for example, for the preparation of ultralow dielectric constant pSiCOH film), and is a component of photochemically formed SiOX monolayers on TiO. It is a good impregnant of photoelectric material. It can be used for the manufacturing of modified siloxane with defined hydrogen content and chain quality.
Chemische Eigenschaften
Colorless or yellowish transparent liquid
Verwenden
2,4,6,8-Tetramethylcyclotetrasiloxane can occur addition reaction with unsaturated alkenes, so it’s utilized widely to synthesize variety functional reactive silicone fluids which is used to form silicone block copolymer, or used as crosslinker of vinyl addition silicone rubber. Tetramethyl-cyclotetrasiloxane is a good impregnant of photoelectric material. It is used to manufacture of modified siloxane with defined hydrogen content and chain quantity. It is also used in production of silicone polymers and acts as a precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics and semiconductors.
Verwenden
2, 4, 6, 8-Tetramethylcyclotetrasiloxane (TMCTS) is an important precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics, semiconductors and other applications
Allgemeine Beschreibung
Atomic number of base material: 14 Silicon
Flammability and Explosibility
Flammable
Synthese
The synthesis process of 2,4,6,8-Tetramethylcyclotetrasiloxane is as follows. A 1-L four-necked flask equipped with a thermometer, stirrer, column packed with cylindrical glass of about 1x1 mm to a height of 500 mm, water-cooled condenser, outlet tube, and distillate receiver was connected to a vacuum pump. To the flask were fed 100 g of trimethylsiloxy end-capped dimethylpolysiloxane having a viscosity of 10,000 centistokes at 25°C and 1.0 g of the catalyst (i) synthesized above, after which agitation was commenced. While the flask interior was kept under a reduced pressure of 50 mmHg, the flask was heated at 250-260°C using a mantle heater. A fraction distilled out for 14 hours was collected (45 g). The residue (31 g) was a clear liquid. yeild= 52%
Einzelnachweise
https://www.alfa.com/zh-cn/catalog/L16642/
http://www.sigmaaldrich.com/catalog/product/aldrich/512990?lang=en&region=US
Grill, A., and V. Patel. "Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor." Journal of Applied Physics 104.2(2008):107.
Zhang, Jianming, D. S. Wavhal, and E. R. Fisher. "Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas." Journal of Vacuum Science & Technology A Vacuum Surfaces & Films 22.1(2004):201-213.
Fujino, Katsuhiro, et al. "Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition, Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone." Japanese Journal of Applied Physics 33. 4A (1994):2019-2024.

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