SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS) Struktur

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

Bezeichnung:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

CAS-Nr

Englisch Name:SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.995% (METALS BASIS)

CBNumberCB0660183

SummenformelO2Si

Molgewicht60.0843

MOL-DateiMol file