25617-98-5

-100 mesh with 99.999% purity; wurtzite system, a=0.353 nm, c=0.570 nm; can be prepared by reacting In2O3 with ammonia at high temp; has semiconductor and electroluminescence properties [KIR81] [CIC73] [CER91]

In manufacture of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.

According to Hahn and Juza, InN is prepared by placing 1 g. of finely powdered (NH4)3InF5 in a corundum boat and inserting it into the cold zone of a quartz tube heated by an electric furnace. A fast stream of NH3 (dried over Na) is allowed to flow through the tube. The boat is pulled into the hot zone of the tube when the temperature has reached 630°C. The temperature drops to 580-600°C, and the material is held at this temperature for 15 minutes. The temperature is then decreased over 10 minutes to 520°C and held there for another 10 minutes to quantitatively drive out the byproduct NH4F. Slow heat-up times and longer heating of the (NH4)3lnF6 lead to products low in N.

reagent type: catalyst
core: indium